 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| July 1997 FDC6304P Digital FET, Dual P-Channel General Description These P-Channel enhancement mode field effect transistor are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Features -25 V, -0.46 A continuous, -1.0 A Peak. RDS(ON) = 1.5 @ VGS= -2.7 V RDS(ON) = 1.1 @ VGS = -4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model. SOT-23 SuperSOTTM-6 Mark: .304 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 4 3 5 2 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ,TSTG ESD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current TA = 25oC unless other wise noted FDC6304P -25 -8 Units V V A - Continuous - Pulsed -0.46 -1 (Note 1a) (Note 1b) Maximum Power Dissipation 0.9 0.7 -55 to 150 6.0 W Operating and Storage Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) C kV THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 140 60 C/W C/W FDC6304P Rev.D (c) 1997 Fairchild Semiconductor Corporation Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 o C VDS = -20 V, VGS = 0 V TJ = 55C IGSS Gate - Body Leakage Current (Note 2) -25 -22 -1 -10 -100 V mV /o C A A nA mV /o C -1.5 1.5 1.1 2 A V BVDSS/TJ IDSS VGS = -8 V, VDS= 0 V ID = -250 A, Referenced to 25 o C VDS = VGS, ID = -250 A VGS = -2.7 V, ID = -0.25 A VGS = -4.5 V, ID = -0.5 A TJ =125C -0.65 2.1 -0.86 1.22 0.87 1.21 -0.5 -1 0.8 ON CHARACTERISTICS VGS(th)/TJ VGS(th) RDS(ON) Gate Threshold Voltage Temp. Coefficient Gate Threshold Voltage Static Drain-Source On-Resistance ID(ON) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current VGS = -2.7 V, VDS = -5 V VGS = -4.5 V, VDS = -5 V VDS = -5 V, ID= -0.5 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz Forward Transconductance S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) 62 35 9.5 pF pF pF SWITCHING CHARACTERISTICS Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -6 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 7 8 55 35 20 20 110 70 1.5 ns ns ns ns nC nC nC VDS = -5 V, ID = - 0.25 A, VGS = -4.5 V 1.1 0.32 0.28 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note 2) -0.5 -0.88 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 140OC/W on a 0.125 in2 pad of 2oz copper. b. 180OC/W on a 0.005 in2 of pad of 2oz copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. FDC6304P Rev.D Typical Electrical Characteristics -1.5 I D , DRAIN-SOURCE CURRENT (A) -1.25 -1 2.5 -3.5 -3.0 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V V GS = -2.0 V 2 -2.7 -2.5 -0.75 -0.5 -0.25 -2.5 1.5 -2.7 -3.0 -3.5 -2.0 1 -4.5 -1.5 0 0 -1 -2 -3 -4 -5 0.5 V DS, DRAIN-SOURCE VOLTAGE (V) 0 0.25 0.5 -ID , DRAIN CURRENT (A) 0.75 1 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 R DS(ON) , NORMALIZED 5 I D = -0.25A 1.4 R DS(on) , ON-RESISTANCE (OHM) DRAIN-SOURCE ON-RESISTANCE 25C 4 125C I D = -0.5A V GS = -2.7V 1.2 3 1 2 0.8 1 0.6 -50 -25 0 25 50 75 100 T J, JUNCTION TEMPERATURE (C) 125 150 0 -1 -1.5 -2 -2.5 -3 -3.5 -4 -4.5 -5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-To- Source Voltage. -1 V DS = -5V I D , DRAIN CURRENT (A) -0.75 T J = -55C 25C 125C -I , REVERSE DRAIN CURRENT (A) 0.5 VGS = 0V 0.1 T J = 125C 25C -0.5 0.01 -55C -0.25 0 -0.5 -1 -1.5 -2 -2.5 V GS , GATE TO SOURCE VOLTAGE (V) -3 S 0.0001 0 0.2 0.4 0.6 0.8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC6304P Rev.D Typical Electrical And Thermal Characteristics 5 -V GS , GATE-SOURCE VOLTAGE (V) 150 I D = -0.25A 4 VDS = 5V 10V 15V CAPACITANCE (pF) 100 Ciss 50 3 Coss 20 2 1 10 f = 1 MHz V GS = 0 V Crss 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 Q g , GATE CHARGE (nC) 5 0.1 0.3 -V 0.5 1 5 10 , DRAIN TO SOURCE VOLTAGE (V) 15 25 DS Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 2 1 -I D , DRAIN CURRENT (A) IT LIM N) (O S RD 5 1m s 10 m s POWER (W) 4 SINGLE PULSE R J A 0.3 10 0m s 1s =See note 1a TA = 25C 3 DC 0.1 2 0.03 VGS = -4.5V SINGLE PULSE R JA = See Note 1a A T = 25C A 0.2 0.5 1 2 5 10 20 40 1 0.01 0.1 0 0.01 0.1 - V DS , DRAIN-SOURCE VOLTAGE (V) 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 0.5 D = 0.5 0.2 0.1 0.05 0.2 0.1 P(pk) 0.05 0.02 0.01 Single Pulse RJA (t) = r(t) * R JA R JA = See Note 1b t1 t2 0.02 0.01 0.0001 TJ - TA = P * R JA(t) Duty Cycle, D = t 1/ t 2 0.01 0.1 t 1, TIME (sec) 1 10 100 300 0.001 Figure 11. Transient Thermal Response Curve. Note: Thermal characterization performed using the conditions described in note 1b.Transient thermal response will change depending on the circuit board design. FDC6304P Rev.D |
Price & Availability of FDC6304P
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |